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Department of Physics & Astronomy

[Hyunsoo Ha, Prof. Bohm-Jung Yang] Colossal angular magnetoresistance in ferrimagnetic nodal-line semiconductors

November 25, 2021l Hit 276

Efficient magnetic control of electronic conduction is at the heart of spintronic functionality for memory and logic applications1,2. Magnets with topological band crossings serve as a good material platform for such control, because their topological band degeneracy can be readily tuned by spin configurations, dramatically modulating electronic conduction3–10. Here we propose that the topological nodal-line degeneracy of spin-polarized bands in magnetic semiconductors induces an extremely large angular response of magnetotransport. Taking a layered ferrimagnet, Mn3Si2Te6, and its derived compounds as a model system, we show that the topological band degeneracy, driven by chiral molecular orbital states, is lifted depending on spin orientation, which leads to a metal–insulator transition in the same ferrimagnetic phase. The resulting variation of angular magnetoresistance with rotating magnetization exceeds a trillion per cent per radian, which we call colossal angular magnetoresistance. Our findings demonstrate that magnetic nodal-line semiconductors are a promising platform for realizing extremely sensitive spin- and orbital-dependent functionalities.
 

Authors: Junho Seo* , Chandan De* , Hyunsoo Ha* (서울대), Ji Eun Lee* , Sungyu Park, Joonbum Park, Yurii Skourski, Eun Sang Choi, Bongjae Kim, Gil Young Cho, Han Woong Yeom, Sang-Wook Cheong, Jae Hoon Kim, Bohm-Jung Yang (서울대), Kyoo Kim &Jun Sung Kim

 

Publication date: 25 November 2021

Link: Colossal angular magnetoresistance in ferrimagnetic nodal-line semiconductors | Nature