We have grown high-quality single crystals of magnetically doped topological insulators based on Bi2Se3 and Bi2Te3 by melting and Bridgeman methods. It is generally accepted that the magnetic element doping induces breaking of the time reversal symmetry and leads to opening energy gap. This is the main reason why we frequently observe a variety of exotic physical properties in magnetically topological insulators. By magnetic doping to Bi2Se3, we have observed p-type charge carriers with almost same magnitude of n-type carrier concentration in pure material. This is applicable for thermoelectric materials. We have also observed quantum oscillations in transport and magnetic properties of magnetically doped Bi2Te3 materials. The results of extremely high mobility and low carrier concentration are discussed in this talk.