Irradiation Effects of High Energy Proton Beams on MoS2 Field Effect Transistors

본 논문에서는 전이금속 칼코겐화합물(transition-metal dichalcogenide) 이황화몰리브덴(MoS2)으로 이용하여 전계효과 트랜지스터(field effect transistor)를 제작하고, 이 소자에 사이클로트론으로 생성된 고에너지 (10 MeV) 양성자 빔을 조사하여 소자의 전기적 구동 특성 변화 및 제어에 대해 연구했다. 다양한 양성자 빔 도즈량(단위면적당 개수)에 따라 변하는 소자의 전기적 구동 특성을 관찰했고, 시간에 따라 이 특성이 어떻게 변화되는지를 관찰하고 분석한 기초적인 연구 결과이다.

Abstract: We investigated the effect of irradiation on molybdenum disulfide (MoS2) field effect transistors (FETs) with 10 MeV high energy proton beams. The electrical characteristics of the devices were measured before and after proton irradiation with fluence conditions of 1012, 1013, and 1014 cm-2. For a low proton beam fluence condition of 1012 cm-2, the electrical properties of the devices were nearly unchanged in response to proton irradiation. In contrast, for proton beam fluence conditions of 1013 or 1014 cm-2, the current level and conductance of the devices significantly decreased following proton irradiation. The electrical changes originated from proton-irradiation-induced traps, including positive oxide-charge traps in the SiO2 layer and trap states at the interface between the MoS2 channel and the SiO2 layer. Our study will enhance the understanding of the influence of high energy particles on MoS2-based nanoelectronic devices.

Authors: Tae-Young Kim(서울대), Kyungjune Cho(서울대), Woanseo Park(서울대), Juhun Park(서울대), Younggul Song(서울대), Seunghun Hong(서울대), Woong-Ki Hong(KBSI), Takhee Lee(서울대)*

ACS Nano, Just Accepted Manuscript
DOI: 10.1021/nn4064924
Publication Date (Web): February 24, 2014
http://pubs.acs.org/doi/abs/10.1021/nn4064924