Organic resistive nonvolatile memory materials

본 논문은 유기물 기반의 저항변화 비휘발성 메모리 소자 연구의 리뷰 논문이다. 두 가지 이상의 안정된 저항 상태를 정보저장 메모리 상태로 활용하는 유기메모리 소자는 효율적인 구조, 저비용, 휘어짐 등 다양한 특성으로 활발한 연구가 되고 있다. 이 논문에서는 다양한 유기 메모리 소자의 물질, 구조, 메모리 구동 특성 및 메커니즘을 포함하여, 소자 제작, 메모리 성능 향상, 그리고 회로구조의 아키텍쳐 등에 대해서 리뷰를 하였다. 미국 UCLA 의 Yong Chen 교수와 공동집필. (표지그림으로 소개되었음.)

(영문초록) Resistive memory devices based on organic materials that can be configured to two or more stable resistance states have been extensively explored as information storage media due to their advantages, which include simple device structures, low fabrication costs, and flexibility. Various organic-based materials such as small molecules, polymers, and composite materials have been observed to show bistability. This review provides a general summary about the materials, structures, characteristics, and mechanisms of organic resistive memory devices. Several critical strategies for device fabrication, performance enhancement, and integrated circuit architectures are also discussed.

커버그림 설명: Resistive switching phenomena in thin films: Materials, devices, and applications. This issue of MRS Bulletin starts by reviewing some of the promising applications of resistive switching phenomena in thin-fi lm devices, and then follows with the detailed discussion of current state-of-the-art understanding of the physics behind this phenomenon in several major classes of material systems. The cover shows a 17 × 17 crossbar array of 50-nm-thick TiO2 memristors defined by 50-nm-wide platinum electrodes spaced by 50 nm gaps. (Image courtesy of J. Joshua Yang, G. Medeiros-Ribeiro, and R. Stan Williams of Hewlett Packard Labs.) A schematic illustrating a crossbar array memory circuit with a unit cell size of 100 × 100 nm2, fabricated by a direct metal-transfer process, is superimposed on the right (adapted from Kim et al., Adv. Mater., 23, 2104 [2011]).


MRS Bulletin, Volume 37, Issue 2, pages 144–149
Publication Date: February, 2012