The current electronics industry has been completely dominated by Si-based devices due to its exceptionally low materials cost. However, demand for non-Si electronics is becoming substantially high because current/next generation electronics requires novel functionalities that can never be achieved by Si-based materials. Unfortunately, the extremely high cost of non-Si semiconductor materials prohibits the progress in this field. Recently our team has invented a new crystalline growth concept, termed as “remote epitaxy”, which can copy/paste crystalline information of the wafer remotely through graphene, thus generating single-crystalline films on graphene [1,2]. These single-crystalline films are easily released from the slippery graphene surface and the graphene-coated substrates can be infinitely reused to generate single-crystalline films. Thus, the remote epitaxy technique can cost-efficiently produce freestanding single-crystalline films. This allows unprecedented functionality of flexible device functionality required for current ubiquitous electronics. I will also present detailed mechanism behind remote atomic interaction through graphene [2]. In addition, we have recently demonstrated a manufacturing method to manipulate wafer-scale 2D materials with atomic precision to form monolayer-by-monolayer stacks of wafer-scale 2D material heterostructures [3]. In this talk, I will discuss the implication of this new technology for revolutionary design of next generation electronic/photonic devices with combination of 3D/2D materials.

[1] Y. Kim, et al, and J. Kim, “Remote epitaxy through graphene enables two-dimensional material based layer transfer” Nature, Vol. 544, 340 (2017)

[2] W. Kong, et al, and J. Kim, “Polarity govern atomic interaction through two-dimensional materials”, Nature Materials, Vol. 17, 999 (2018)

[3] J. Shim, S. Bae, et al, and J. Kim, “Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials” Science, 362, 665 (2018)