The electronic property of low-dimensional systems has long been an interesting topic in both physics and engineering societies. Silicon MOSFET and III-V HEMT devices, for example, not only have been the most essential elements in micro- and nano-electronics since 1950’s but have also provided wonderful playgrounds for correlated electron systems leading to the observation of integer and fractional quantum Hall effects. These traditional two-dimensional electron systems now reconfigure themselves into atomic sheets, flourishing a whole new physics originating from the material aspects as well as the dimensionality itself. Such new physics presents us with a reciprocal chance of innovating conventional two-dimensional devices, and in this talk, I will briefly mention these new chances and accompanying challenges. I will also present a brief introduction of an STM with the base temperature of 7 mK and the magnetic field of 15.5 T, that SAIT recently finished setting up.