Department of Physics & Astronomy

[Jinsu Pak, Dr. Seungjun Chung, and Prof. Takhee Lee]  Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent van der Waals Heterostructure (ACS Nano)

August 2, 2019l Hit 1306

In the past decade, intensive studies on monolayer MoS2-based phototransistors have been carried out to achieve further enhanced optoelectronic characteristics. However, the intrinsic optoelectronic characteristics of monolayer MoS2 have still not been explored until now because of unintended interferences, such as multiple reflections of incident light originating from commonly used opaque substrates. This leads to overestimated photoresponsive characteristics inevitably due to the enhanced photogating and photoconductive effects. Here, we reveal the intrinsic photoresponsive characteristics of monolayer MoS2, including its internal responsivity and quantum efficiency, in fully transparent monolayer MoS2 phototransistors employing a van der Waals heterostructure. Interestingly, as opposed to the previous reports, the internal photoresponsive characteristics do not significantly depend on the wavelength of the incident light as long as the electronhole pairs are generated in the same k-space. This study provides a deeper understanding of the photoresponsive characteristics of MoS2 and lays the foundation for two-dimensional materials-based transparent phototransistors.


Authors: Jinsu Pak, Ilmin Lee, Kyungjune Cho, Jae-Keun Kim, Hyunhak Jeong, Wang-Taek Hwang, Geun Ho Ahn, Keehoon Kang, Woo Jong Yu, Ali Javey, Seungjun Chung,* and Takhee Lee*


ACS Nano

Publication Date (Web): July 25, 2019

DOI: 10.1021/acsnano.9b04829